METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device equipped with an oxide semiconductor film having conductivity, and also to provide a method of manufacturing the semiconductor device which has light transmissivity and is equipped with the oxide semiconductor film having conductivity.SOLUTION: Disclosed is a method of manufacturing a semiconductor device in which an oxide semiconductor film is formed on a first insulation film, and the oxide semiconductor film having conductivity is formed by performing a second heating treatment in an atmosphere including hydrogen after performing a first heating treatment in the atmosphere in which oxygen contained in the oxide semiconductor film is desorbed therefrom.