发明名称 |
CIGS FILM PRODUCTION METHOD, AND CIGS SOLAR CELL PRODUCTION METHOD USING THE CIGS FILM PRODUCTION METHOD |
摘要 |
The CIGS film production method includes: a stacking step of stacking a layer (A) containing indium, gallium and selenium and a layer (B) containing copper and selenium, in this order in a solid phase over a substrate; and a heating step of heating the resulting stack of the layer (A) and the layer (B) to melt the layer (B) into a liquid phase, whereby copper is diffused from the layer (B) into the layer (A) to cause crystal growth; wherein the layer (A) is formed by repeatedly stacking a gallium selenide film (Y) and an indium selenide film (X) in this order and reducing a thickness ratio (Y/X) between the gallium selenide film (Y) and the indium selenide film (X) as the stacking is repeated. |
申请公布号 |
US2015380596(A1) |
申请公布日期 |
2015.12.31 |
申请号 |
US201414766565 |
申请日期 |
2014.01.24 |
申请人 |
NITTO DENKO CORPORATION |
发明人 |
Nishii Hiroto;Watanabe Taichi;Yamamoto Yusuke;Teraji Seiki;Kawamura Kazunori |
分类号 |
H01L31/18;H01L31/0392 |
主分类号 |
H01L31/18 |
代理机构 |
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代理人 |
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主权项 |
1. A CIGS film production method comprising the steps of:
stacking a layer (A) containing indium, gallium and selenium and a layer (B) containing copper and selenium, in this order in a solid phase over a substrate; and heating a resulting stack of the layer (A) and the layer (B) to melt the layer (B) into a liquid phase, whereby copper is diffused from the layer (B) into the layer (A) to cause crystal growth; wherein the layer (A) is formed by repeatedly stacking a gallium selenide film (Y) and an indium selenide film (X) in this order and reducing a thickness ratio (Y/X) between the gallium selenide film (Y) and the indium selenide film (X) as the stacking is repeated. |
地址 |
Ibaraki-shi, Osaka JP |