发明名称 PROCESS FOR PRODUCING DIAMOND SUBSTRATE, DIAMOND SUBSTRATE, AND DIAMOND COMPOSITE SUBSTRATE
摘要 A process for producing a diamond substrate which comprises: a step in which ions are implanted into a main surface (11) of a diamond seed substrate (10) to thereby form an ion-implanted layer (15) on the main surface (11) side of the diamond seed substrate (10); a step in which after the ion implantation, a diamond growth layer (20) is grown by a vapor-phase synthesis method on the main surface (11) of the diamond seed substrate (10) to thereby produce a diamond structure (30); and a step in which the diamond structure (30) is subjected to a heat treatment. By conducting the heat treatment, the diamond structure (30) is separated at the ion-implanted layer (15) into a first structure (40) which does not include the diamond growth layer (20) and comprises the diamond seed substrate (10) and a diamond substrate (50) which comprises the diamond growth layer (20). Thus, a process for producing a diamond substrate is provided with which it is possible to produce a large-area diamond substrate (50) in a short time at low cost.
申请公布号 WO2015199180(A1) 申请公布日期 2015.12.30
申请号 WO2015JP68363 申请日期 2015.06.25
申请人 SUMITOMO ELECTRIC INDUSTRIES, LTD. 发明人 OKAHISA, TAKUJI;YAMAMOTO, YOSHIYUKI;NISHIBAYASHI, YOSHIKI;TATSUMI, NATSUO
分类号 C30B29/04;C01B31/06;C23C16/01;C23C16/02;C23C16/27;C23C16/56 主分类号 C30B29/04
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