发明名称 |
PROCESS FOR PRODUCING DIAMOND SUBSTRATE, DIAMOND SUBSTRATE, AND DIAMOND COMPOSITE SUBSTRATE |
摘要 |
A process for producing a diamond substrate which comprises: a step in which ions are implanted into a main surface (11) of a diamond seed substrate (10) to thereby form an ion-implanted layer (15) on the main surface (11) side of the diamond seed substrate (10); a step in which after the ion implantation, a diamond growth layer (20) is grown by a vapor-phase synthesis method on the main surface (11) of the diamond seed substrate (10) to thereby produce a diamond structure (30); and a step in which the diamond structure (30) is subjected to a heat treatment. By conducting the heat treatment, the diamond structure (30) is separated at the ion-implanted layer (15) into a first structure (40) which does not include the diamond growth layer (20) and comprises the diamond seed substrate (10) and a diamond substrate (50) which comprises the diamond growth layer (20). Thus, a process for producing a diamond substrate is provided with which it is possible to produce a large-area diamond substrate (50) in a short time at low cost. |
申请公布号 |
WO2015199180(A1) |
申请公布日期 |
2015.12.30 |
申请号 |
WO2015JP68363 |
申请日期 |
2015.06.25 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
OKAHISA, TAKUJI;YAMAMOTO, YOSHIYUKI;NISHIBAYASHI, YOSHIKI;TATSUMI, NATSUO |
分类号 |
C30B29/04;C01B31/06;C23C16/01;C23C16/02;C23C16/27;C23C16/56 |
主分类号 |
C30B29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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