Memristive elements that exhibit minimal sneak path current

摘要

Memristive elements are provided that include an active region disposed between a first electrode and a second electrode, the active region including two switching layers formed of a switching material capable of carrying a species of dopants and a conductive layer formed of a dopant source material. Memristive elements also are provided that include two active regions disposed between a first electrode and a second electrode, and a third electrode being disposed between and in electrical contact with both of the active regions. Each of the active regions include a switching layer formed of a switching material capable of carrying a species of dopants and a conductive layer formed of a dopant source material. Multilayer structures including the memristive elements also are provided.

主权项

1. A memristive element, comprising:
a first electrode of a nanoscale width; a second electrode of a nanoscale width; and an active region disposed between and in electrical contact with the first and second electrodes, wherein: the active region having two switching layers formed of a switching material capable of carrying a species dopants of and transporting the dopants under an applied potential and a conductive layer disposed between and in electrical contact with the switching layers, the conductive layer being formed of a dopant source material that includes the species of dopants that are capable of drifting into the switching layers under the applied potential; a first switching layer of the two switching layers develops an excess of dopants and a second switching layer of the two switching layers develops a deficiency of dopants when potential is applied in a first direction, and the first switching layer of the two switching layers develops a deficiency of dopants and the second switching layer of the two switching layers develops an excess of dopants when potential is applied in a second direction that is opposite to the first direction.