Planar interdigitated capacitor structures and methods of forming the same

摘要

A planar interdigitated capacitor structure, methods of forming, and devices including, the same. The device includes first and second planar electrode structures including respective first and second pluralities of planar continuous rectangular plate electrode elements formed above a semiconductor substrate and extending continuously in first and second orthogonal directions substantially parallel to a plane of the substrate, and first and second conductors interconnecting the respective first and second pluralities of planar electrode elements parallel to a third axis substantially normal to the plane of the substrate. The first and second planar electrode structures are arranged with respective continuous rectangular plate electrode elements of each planar electrode structure interleaved and substantially parallel with each other between the first and second conductors. The device also includes a dielectric material between the first planar electrode structure and the second planar electrode structure.

主权项

1. A device, comprising:
a semiconductor substrate extending in first and second orthogonal directions; a first electrode structure and a second electrode structure, each comprising:
one or more first continuous rectangular plates having a respective first continuous length and a respective first continuous width measured parallel to the first and second directions respectively;one or more second continuous rectangular plates having a respective continuous width measured parallel to the first direction and substantially equal to the first continuous width and a respective continuous length measured parallel to the second direction and that is shorter than the first continuous length; a first conductor interconnecting the first and second continuous rectangular plates of the first electrode structure in a third direction normal to the first and second directions, and a second conductor interconnecting the first and second continuous rectangular plates of the second electrode structure in the third direction; wherein the first and second electrode structures are arranged with respective continuous rectangular plates thereof interleaved and substantially parallel with each other; wherein each first continuous rectangular plate of the first electrode structure is disposed at the same respective layer as a respective second continuous rectangular plate of the second electrode structure, and each second continuous rectangular plate of the first electrode structure is disposed at the same respective layer as a respective first continuous rectangular plate of the second electrode structure; and a dielectric material between the first electrode structure and the second electrode structure.