| 发明名称 |
OXYGEN DOPED CADMIUM MAGNESIUM TELLURIDE ALLOY |
| 摘要 |
A band gap material includes an alloy of cadmium, tellurium and magnesium. The alloy is doped with oxygen wherein the alloy includes an intermediate band positioned between conduction and valance bands of the alloy. The alloy has the formula: Cd1-xMgxTeOy wherein 0.1≦x≦0.75 and y≦0.1. |
| 申请公布号 |
US2015372180(A1) |
申请公布日期 |
2015.12.24 |
| 申请号 |
US201414312114 |
申请日期 |
2014.06.23 |
| 申请人 |
Toyota Motor Engineering & Manufacturing North America, Inc. ;The Regents of the University of Michigan |
发明人 |
Zhou Li Qin;Ling Chen;Jia Hongfei;Phillips Jamie Dean;Chen Chihyu |
| 分类号 |
H01L31/073;H01L31/0725;C22C20/00 |
主分类号 |
H01L31/073 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A band gap material comprising:
an alloy of cadmium, tellurium and magnesium, the alloy doped with oxygen wherein the alloy includes an intermediate band positioned between conduction and valance bands of the alloy wherein the alloy has the formula: Cd1-xMgxTeOy wherein 0.1≦x≦0.75 and y≦0.1. |
| 地址 |
Erlanger KY US |
