发明名称 RADIATION-SENSITIVE OR ACTIVE-RAY-LIGHT-SENSITIVE RESIN COMPOSITION, RESIST FILM IN WHICH SAME IS USED, MASK BLANK, RESIST PATTERN FORMATION METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE
摘要 A radiation-sensitive or active-ray-light-sensitive resin composition contains a polymer compound (A) having a structural site (a) that is decomposed by irradiation of active light rays or radiation and generates an acid anion on a side chain, and a repeating unit (b) expressed in general formula (I). In the formula, R3 represents a hydrogen atom, an organic group, or a halogen atom. A1 represents an aromatic ring group or an alicyclic group. R1 and R2 each individually represent an alkyl group, a cycloalkyl group, or an aryl group. At least two of A1, R1, and R2 may be bonded together to form a ring. B1 and L1 each individually represent a single bond or a divalent linking group. X represents a hydrogen atom or an organic group. n represents an integer of 1 or greater. When n represents an integer of 2 or more, the multiple instances of L1, the multiple instances of R1, the multiple instances of R2, and the multiple instances of X may be the same as, or different from, each other.
申请公布号 WO2015194330(A1) 申请公布日期 2015.12.23
申请号 WO2015JP65083 申请日期 2015.05.26
申请人 FUJIFILM CORPORATION 发明人 TSUCHIMURA TOMOTAKA
分类号 G03F7/038;C08F212/14;C08F220/38 主分类号 G03F7/038
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