| 摘要 |
The present disclosure pertains to a solid-state imaging element and an electronic device with which it is possible to improve sensitivity to light having long wavelengths. A solid-state imaging element according to a first aspect of the present disclosure has a plurality of pixels disposed vertically and horizontally, wherein the solid-state imaging element is provided with a periodically uneven pattern on a light-receiving side of a light-absorbing layer as well as on the reverse side thereof, the light-absorbing layer being a light-detecting element. The present disclosure can be applied to a CMOS, etc., that is mounted on a sensor requiring high sensitivity to light belonging to a high wavelength region; e.g., infrared light. |
