| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device capable of suppressing spreading of a threshold value distribution and shortening write/read time. <P>SOLUTION: The nonvolatile semiconductor storage device is provided with a memory cell array including a plurality of NAND strings where a plurality of electrically rewritable memory cells are serially connected, a cell source line 15 commonly connected to the plurality of NAND strings, and a cell source driver circuit 30 for boosting a voltage of the cell source line 15 to a first reference voltage when the voltage of the cell source line is smaller than the first reference voltage in comparison of the voltage of the cell source line 15 with the first reference voltage, and lowering the voltage of the cell source line to a second reference voltage to hold it constant when the voltage of the cell source line 15 is larger than the second reference voltage in comparison of the voltage of the cell source line 15 with the second reference voltage. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
