| 摘要 |
PROBLEM TO BE SOLVED: To provide a compound semiconductor device and its manufacturing method using an insulating film as a mask for applying recess etching to a cap layer without leaving a seam-like insulating film. SOLUTION: On a first insulating film formed on the cap layer, an electron beam resist layer is formed covering a source electrode and a drain electrode. A recess forming opening and a seam removing opening are exposed to electron beams at a high dose amount and at a low dose amount, respectively, and developed by low-soluble developer to form a recess forming opening. Wet etching is selectively applied to the cap layer to form a recess RC wider than the recess forming opening. After etching is applied to the exposed first insulating film to decay seams, the first insulating film is covered to form a second insulating film on the surface of the exposed semiconductor and form a resist pattern having a gate electrode opening on the second insulating film. Etching is applied to the second insulating film to form a gate electrode forming metal layer which is lifted off to form a gate electrode. COPYRIGHT: (C)2009,JPO&INPIT
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