| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an EUV light exposure mask having no effect on the substantial reflection performance of a multilayer film 2 portion even if it is not stripped and in which the structure and material of a buffer film 4 are specified to have the essential function, i.e., the protective function of the multilayer film 2, and to provide a blank for producing the mask and a patterning method employing that mask. <P>SOLUTION: The mask for EUV light exposure includes: a multilayer film 2 formed on a substrate 1 and becoming an area for reflecting the exposure light; a patterned thin film 3 on the multilayer film 2 for absorption; and a thin film 4 interposed between the multilayer film 2 and the absorbent thin film for buffering, wherein the buffering thin film 4 is provided on the entire surface of the multilayer film 2. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
