<p>A photodetector integrated within a silicon-on-insulator (SOI) structure is formed directly upon an inverse nanotaper endface coupling region to reduce polarization sensitivity at the detector's input. The photodetector may be germanium -based PN (PIN) junction photodetector, a SiGe photodetector, a metal/silicon Schottky barrier photodetector, or any other suitable silicon-based photodetector. The inverse nanotaper photodetector may also be formed as an in-line monitoring device, converting only a portion of the in-coupled optical signal and allowing for the remainder to thereafter propagate along an associated optical waveguide.</p>
申请公布号
WO2008115194(A2)
申请公布日期
2008.09.25
申请号
WO2007US14102
申请日期
2007.06.13
申请人
SIOPTICAL, INC.;PIEDE, DAVID;PATEL, VIPULKUMAR;GHIRON, MARGARET;GOTHOSKAR, PRAKASH;MONTGOMERY, ROBERT, KEITH
发明人
PIEDE, DAVID;PATEL, VIPULKUMAR;GHIRON, MARGARET;GOTHOSKAR, PRAKASH;MONTGOMERY, ROBERT, KEITH