| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method of polycrystalline silicon for TFT that can be applied to a flat panel display device, such as a liquid crystal display device. <P>SOLUTION: The manufacturing method of polycrystalline silicon includes: a step (a) for supplying a feed gas containing the vapor or gas of an organic metal compound on amorphous silicon; a step (b) for adsorbing a prescribed amount of feed gas onto the amorphous silicon by adjusting at least one of adsorption pressure, adsorption time, and adsorption temperature; a step (c) for removing the feed gas that has not been adsorbed on the amorphous silicon in (b); a step (d) for supplying an auxiliary gas onto the amorphous silicon where the feed gas is adsorbed; a step (e) for adsorbing a prescribed amount of metal on the amorphous silicon finally by allowing the feed gas adsorbed on the amorphous silicon to react with the auxiliary gas; and a step (f) for heat-treating the amorphous silicon where the metal is adsorbed. The amount of metal adsorbed on a thin film in the amorphous silicon can be adjusted appropriately and finely, and contamination due to metal can be prevented although crystallization temperature is lowered in crystallizing silicon by a metal induced crystallization system. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
