发明名称 |
Methods for forming field effect transistors and EPI-substrate |
摘要 |
A semiconductor method includes thermally treating at least a portion of a substrate so as to generate a plurality of vacancies in a region at a depth substantially near to a surface of the substrate. The substrate is then quenched so as to substantially maintain the vacancies in the region substantially near to the surface of the substrate.
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申请公布号 |
US7713852(B2) |
申请公布日期 |
2010.05.11 |
申请号 |
US20070761751 |
申请日期 |
2007.06.12 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHEN PU-FANG |
分类号 |
H01L21/04 |
主分类号 |
H01L21/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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