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发明名称
AN IMPROVED METHOD FOR FABRICATING AN ULTRALOW DIELECTRIC CONSTANT MATERIAL AS AN INTRALEVEL OR INTERLEVEL DIELECTRIC IN A SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE
摘要
申请公布号
KR100956580(B1)
申请公布日期
2010.05.10
申请号
KR20067023662
申请日期
2005.03.23
申请人
发明人
分类号
H01L21/312;C23C16/40;H01L21/316
主分类号
H01L21/312
代理机构
代理人
主权项
地址
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