Thick film photoresist composition and method of forming resist pattern

摘要

A negative thick film photoresist composition with improved alkali developability is provided. The composition comprises: (A) a resin component containing (a) from 61 to 90% by weight of a structural unit derived from a cyclic alkyl (meth)acrylate ester, and (b) a structural unit derived from a radical polymerizable compound containing a hydroxyl group, (B) a polymerizable compound containing at least one ethylenic unsaturated double bond, (C) a photopolymerization initiator, and (D) an organic solvent.