发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide technique for achieving size reduction by constituting an MEMS structure such that pressure and a vibration signal from an outside space can be directly received, and mounting facedown a semiconductor chip where the MEMS structure and an integrated circuit are formed on a module substrate with bump electrodes. SOLUTION: The integrated circuit is formed on one surface of a semiconductor substrate 1, and the MEMS structure is formed on the other surface of the semiconductor substrate 1. Then the bump electrodes BP formed on the integrated circuit are used for flip-chip connections with a mounting substrate. At this time, a transducer can be disposed facing the outside space. Consequently, the transducer never loses a function of interacting directly with the outside space, and a semiconductor device can be made compact. Here, the integrated circuit and MEMS structure are electrically connected through electrodes 20a and 20b penetrating the substrate 1. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009200233(A) 申请公布日期 2009.09.03
申请号 JP20080040030 申请日期 2008.02.21
申请人 HITACHI LTD 发明人 GOTO YASUSHI;FUJIMORI TSUKASA
分类号 H01L21/822;G01L9/00;H01L21/768;H01L21/8234;H01L27/04;H01L27/06;H01L29/84 主分类号 H01L21/822
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