发明名称 Semiconductor device
摘要 A semiconductor device includes first underlying lines in an underlying wiring layer electrically connected to and shaped like a first semiconductor region, second underlying lines in the underlying wiring layer electrically connected to and shaped like a second semiconductor region, a first intermediate line in an intermediate wiring layer electrically connected to the first underlying lines, the first intermediate line including finger regions shaped like the first underlying lines, a coupling section to electrically interconnect the finger regions, a second intermediate line in the intermediate wiring layer electrically connected to the second underlying lines, the second intermediate line including finger regions shaped like the second underlying lines, and a coupling section to electrically connect the finger regions, a first overlying line in an overlying wiring layer electrically connected to the first intermediate line, and a second overlying line in the overlying wiring layer electrically connected to the second intermediate line.
申请公布号 US7851926(B2) 申请公布日期 2010.12.14
申请号 US20080249226 申请日期 2008.10.10
申请人 RENESAS ELECTRONICS CORPORATION 发明人 MOTOYUI TOSHIAKI
分类号 H01L23/52;H01L23/48;H01L29/40 主分类号 H01L23/52
代理机构 代理人
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