发明名称 |
METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION ELEMENT, PHOTOELECTRIC CONVERSION ELEMENT, AND IMAGING ELEMENT |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photoelectric conversion element having sufficient sensitivity and exhibiting high-speed response. <P>SOLUTION: A method for manufacturing the photoelectric conversion element including a pair of electrodes 11 and 15 and a photoelectric conversion layer 12 arranged between the pair of electrodes includes the steps of: heating an organic material until a deposition rate of the organic material is increased to a predetermined stable deposition rate while the organic material containing crystal particles having a minimum diameter of 0.3 mm or more is used as at least one of raw materials for forming the photoelectric conversion layer; sublimating at least one fifth of the total volume of the crystal particles without performing film formation of the photoelectric conversion layer after the deposition rate has increased to the predetermined stable deposition rate; and performing film formation of the photoelectric conversion layer after at least one fifth of the total volume of the organic material has been sublimated. <P>COPYRIGHT: (C)2011,JPO&INPIT |
申请公布号 |
JP2010278155(A) |
申请公布日期 |
2010.12.09 |
申请号 |
JP20090128163 |
申请日期 |
2009.05.27 |
申请人 |
FUJIFILM CORP |
发明人 |
HAMANO MITSUMASA;MITSUI TETSURO |
分类号 |
H01L51/42;H01L27/14;H01L27/146;H01L31/00 |
主分类号 |
H01L51/42 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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