| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an exposure mask having high dimensional accuracy and to provide a method for manufacturing a semiconductor device using the exposure mask. <P>SOLUTION: The exposure mask 1 for transferring a pattern onto a wafer by exposure includes: a pattern formation region 15 where a pattern 16 having a size not smaller than a resolution limit after being transferred onto the wafer, and a sub-pattern formation region 18 where a sub-pattern 19 having a size less than the resolution limit after being transferred onto the wafer, on a substrate 11. The sub-pattern formation region 18 is formed like a frame to surround the pattern formation region 15, and the sub-pattern 19 is separated from the pattern formation region 15 by a distance having no optical proximity effect on the pattern 16. <P>COPYRIGHT: (C)2011,JPO&INPIT |
