发明名称 SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To prevent crack occurrence in a circuit formation region in dicing while preventing oxidation and corrosion of a seal ring including a copper layer in the uppermost layer. SOLUTION: A copper wiring layer 114 becoming the uppermost layer of a seal ring 110 is formed in an interlayer insulation film 109 on a silicon substrate 101, and an aluminum wiring layer 141 covering its upper surface is formed. A plasma nitride film layer 121 is formed on the interlayer insulation film 109 and the aluminum wiring layer 141, and an opening 123 penetrating the plasma nitride film layer 121 is formed between a dicing region and the seal ring. The width of the aluminum wiring layer 141 is formed larger than that of the wiring layer 114. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011091445(A) 申请公布日期 2011.05.06
申请号 JP20110022556 申请日期 2011.02.04
申请人 RENESAS ELECTRONICS CORP 发明人 TOMITA KAZURO
分类号 H01L21/3205;H01L23/52 主分类号 H01L21/3205
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