| 摘要 |
A polysilicon thin film transistor is provided to increase an activation efficiency of a lightly doped region by using a low temperature process without using expensive high temperature activation equipment. A semiconductor layer(30) having a lightly doped region(33), a heavily doped region(36) and a channel region(39) is formed on a substrate(10). A dielectric layer(60) is formed on the semiconductor layer, and a pattern is formed on the interlayer dielectric. The substrate is doped with hydrogen ion. In the step of forming the semiconductor layer, the semiconductor layer is activated at a low temperature, and a buffer layer is formed on the substrate. A gate insulating layer is formed on the substrate layer, and a gate is formed on the gate insulating layer. |
