| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve a problem that an exposure failure part is created at an end part of an LS pattern when a clearance of an LS pattern becomes narrower and a wavelength of exposure light becomes shorter though a chemically amplified resist film is used. <P>SOLUTION: A semiconductor device manufacturing method includes: providing a patterning block film in a non-exposure region adjacent to an end part of an LS pattern and forming a chemically amplified resist film on an exposure region and the non-exposure region; and developing an LS pattern by exposure on the chemically amplified resist film not only on the exposure region but also on the non-exposure region. Because the patterning block film is formed in the non-exposure region, an exposure failure part is not created at an end part of the LS pattern on the exposure region at the time of exposure. As a result, the LS pattern having no disturbed periodicity can be formed in the exposure region. <P>COPYRIGHT: (C)2013,JPO&INPIT |
