Semiconductor devices including stress relief structures

摘要

A microelectronic device includes a substrate having at least one microelectronic component on a surface thereof, a conductive via electrode extending through the substrate, and a stress relief structure including a gap region therein extending into the surface of the substrate between the via electrode and the microelectronic component. The stress relief structure is spaced apart from the conductive via such that a portion of the substrate extends therebetween. Related devices and fabrication methods are also discussed.

主权项

1. A microelectronic device, comprising:
a substrate including at least one microelectronic component on a surface thereof; a via electrode comprising a conductive material extending through the substrate, wherein the at least one microelectronic component on the surface of the substrate is laterally spaced apart from the via electrode; a stress relief structure including a trench and a trench insulating layer extending at least partially therein, the trench having a gap region therein extending into the surface of the substrate between the via electrode and the microelectronic component, wherein the stress relief structure is spaced apart from the via electrode such that a portion of the substrate that is free of microelectronic components extends therebetween, wherein the gap region is not enclosed within the substrate; and a via insulating layer extending along sidewalls of the via electrode between the via electrode and the trench, wherein the via insulating layer and the trench insulating layer comprise portions of a same material layer.