PHOTODETECTOR

摘要

Provided is a photodetector including a graphene p-n homogeneous vertical-junction diode by evaluating photodetection characteristics of the manufactured graphene p-n vertical junction according to the amount of doping. The photodetector comprises a substrate and graphene having a p-n homogeneous vertical junction as a photodetection layer formed on the substrate, wherein the photodetection layer has a detectability of 10E11 (Jones) or higher within the range of 350 nm to 1100 nm, and first and second electrodes are formed on the photodetection layer.

主权项

1. A photodetector comprising:
a substrate; a photodetection layer formed on the substrate, comprising a vertical tunneling-junction of p-type graphene and n-type graphene, and having a detectivity of 10E11 (Jones) or more within the range of 350 nm to 1100 nm; and a first electrode and a second electrode formed on the photodetection layer.