| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for correcting the structure- and pitch-dependent aberrations of a wavefront which are caused by the rigorous effects of a mask, in a method for adapting a projection exposure apparatus for microlithography to the mask having structures with different pitches and/or different structure widths in different structure directions.SOLUTION: A wavefront sensor and/or further sensors and/or a prediction model form(s) a determining unit 770, which supplies information about image aberrations or wavefronts after the passage thereof through an objective system. The manipulators 721, 722, 723 are controlled by a controller 730 to conduct displacement, heating, exchange and the like of an optical element of the projection exposure apparatus, thereby offsetting wavefront aberrations. |
