| 摘要 |
The present invention provides a system for providing a cross-lateral junction field effect transistor ( 114 ) having desired high-performance desired voltage, frequency or current characteristics. The cross-lateral transistor is formed on a commercial semiconductor substrate ( 102 ). A channel structure ( 124 ) is formed along the substrate, having source ( 120 ) and drain ( 122 ) structures laterally formed on opposites sides thereof. A first gate structure ( 116 ) is formed along the substrate, laterally adjoining the channel structure orthogonal to the source and drain structures. A second gate structure ( 118 ) is formed along the substrate, laterally adjoining the channel structure, orthogonal to the source and drain structures and opposite the first gate structure.
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