发明名称 Read, write and erase circuit for programmable memory devices
摘要 A circuit for writing, reading, and erasing a programmable device is disclosed. The programmable device includes an ion conductor and a plurality of electrodes. Electrical properties of the device are altered by applying a sufficient bias across the electrode to form a conductive region within the ion conductor. The circuit can be used to program and read multiple bits within a single programmable device.
申请公布号 US7359236(B2) 申请公布日期 2008.04.15
申请号 US20060276758 申请日期 2006.03.13
申请人 ADESTO TECHNOLOGIES 发明人 GILBERT NAD EDWARD
分类号 G11C11/00 主分类号 G11C11/00
代理机构 代理人
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