发明名称 |
Radio frequency switching circuit with advanced isolation characteristics |
摘要 |
A radio frequency switching circuit may include a first switching circuit unit including first to nth (n is a natural number greater than at least 2) transistors M1 to Mn connected in series between a first signal port for transmission and reception of signals and a common connection node connected to an antenna port and operated according to a first gate signal; a second switching circuit unit connected in series between the common connection node and a second signal port for transmission and reception of signals and operated according to a second gate signal; and a first impedance adjuster forming an alternating current (AC) ground path between a ground and a gate of the first transistor of the first switching circuit unit when the first switching circuit unit is in an off-state. |
申请公布号 |
US9209854(B2) |
申请公布日期 |
2015.12.08 |
申请号 |
US201414281324 |
申请日期 |
2014.05.19 |
申请人 |
Samsung Electro-Mechanics Co., Ltd. |
发明人 |
Kim Yoo Hwan;Na Yoo Sam;Yoo Hyun Jin;Kim Jong Myeong;Yoo Hyun Hwan |
分类号 |
H04B1/44;H04W52/02 |
主分类号 |
H04B1/44 |
代理机构 |
NSIP Law |
代理人 |
NSIP Law |
主权项 |
1. A radio frequency switching circuit comprising:
a first switching circuit unit including first to nth (n is a natural number greater than at least 2) transistors M1 to Mn connected in series between a first signal port for transmission and reception of signals and a common connection node connected to an antenna port and operated according to a first gate signal; a second switching circuit unit connected in series between the common connection node and a second signal port for transmission and reception of signals and operated according to a second gate signal; and a first impedance adjuster forming an alternating current (AC) ground path between a ground and a gate of the first transistor of the first switching circuit unit when the first switching circuit unit is in an off-state. |
地址 |
Suwon-si KR |