发明名称 Radio frequency switching circuit with advanced isolation characteristics
摘要 A radio frequency switching circuit may include a first switching circuit unit including first to nth (n is a natural number greater than at least 2) transistors M1 to Mn connected in series between a first signal port for transmission and reception of signals and a common connection node connected to an antenna port and operated according to a first gate signal; a second switching circuit unit connected in series between the common connection node and a second signal port for transmission and reception of signals and operated according to a second gate signal; and a first impedance adjuster forming an alternating current (AC) ground path between a ground and a gate of the first transistor of the first switching circuit unit when the first switching circuit unit is in an off-state.
申请公布号 US9209854(B2) 申请公布日期 2015.12.08
申请号 US201414281324 申请日期 2014.05.19
申请人 Samsung Electro-Mechanics Co., Ltd. 发明人 Kim Yoo Hwan;Na Yoo Sam;Yoo Hyun Jin;Kim Jong Myeong;Yoo Hyun Hwan
分类号 H04B1/44;H04W52/02 主分类号 H04B1/44
代理机构 NSIP Law 代理人 NSIP Law
主权项 1. A radio frequency switching circuit comprising: a first switching circuit unit including first to nth (n is a natural number greater than at least 2) transistors M1 to Mn connected in series between a first signal port for transmission and reception of signals and a common connection node connected to an antenna port and operated according to a first gate signal; a second switching circuit unit connected in series between the common connection node and a second signal port for transmission and reception of signals and operated according to a second gate signal; and a first impedance adjuster forming an alternating current (AC) ground path between a ground and a gate of the first transistor of the first switching circuit unit when the first switching circuit unit is in an off-state.
地址 Suwon-si KR