SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device having a configuration capable of suppressing a decrease in electrical characteristics which becomes remarkable in association with miniaturization.SOLUTION: A semiconductor device comprises: a first oxide film; an oxide semiconductor film on the first oxide film; a source electrode and a drain electrode in contact with the oxide semiconductor film; a second oxide film on the oxide semiconductor film, the source electrode, and the drain electrode; a gate insulating film on the second oxide film; and a gate electrode in contact with the gate insulating film. An upper end in a channel width direction of the oxide semiconductor film includes a curved surface.