发明名称 FLASH MEMORY BASED STORAGE SYSTEM AND OPERATING METHOD
摘要 A flash memory based storage system and operating method are provided. A host of the storage system requests an erase unit size from the storage device and uses a multiple of the erase unit size to partition a logical address. Each host block may be assigned a state selected from a group of states including: an open state in which an erase unit of the storage device is allocated, a write state in which data is written at an erase unit of the storage device, a close state in which a write operation is no longer performed, and an invalidate state in which valid data of a host block is invalidated.
申请公布号 US2015347291(A1) 申请公布日期 2015.12.03
申请号 US201514721420 申请日期 2015.05.26
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHOI SANG-HOON;KIM SOOJEONG;IM HYUNGJIN;KWON MOONSANG
分类号 G06F12/02;G06F3/06 主分类号 G06F12/02
代理机构 代理人
主权项 1. A flash memory based storage system comprising: a host configured to request erase unit size from a storage device including a flash memory, wherein the storage device is configured to provide the erase unit size related to the flash memory to the host in response to the request for erase unit size, wherein the host is further configured to partition a logical address using a multiple of the erase unit size to generate a plurality of host blocks.
地址 SUWON-SI KR