SEMICONDUCTOR DEVICE

摘要

A semiconductor device includes a drift region of a first conductivity type, a channel forming region of a second conductivity type that is selectively provided in a first main surface of the drift region, a first main electrode region of the first conductivity type that is selectively provided in an upper part of the channel forming region, a second main electrode region of the second conductivity type that is provided in a second main surface of the drift region, and a high-concentration region of the first conductivity type that is provided in a portion of the drift region below the channel forming region so as to be separated from the channel forming region. The high-concentration region has a higher impurity concentration than the drift region and the total amount of first-conductivity-type impurities in the high-concentration region is equal to or less than 2.0×1012 cm−2.

主权项

1. A semiconductor device comprising:
a drift region of a first conductivity type that includes a first main surface and a second main surface opposite to each other; a channel forming region of a second conductivity type that is selectively provided in the first main surface of the drift region; a first main electrode region of the first conductivity type that is selectively provided in an upper part of the channel forming region; a second main electrode region of the second conductivity type that is provided in the second main surface of the drift region; a high-concentration region of the first conductivity type that is provided in a portion of the drift region below the channel forming region so as to be separated from the channel forming region; a drawing region of the second conductivity type that is provided in an outer circumference of the drift region so as to surround the channel forming region and is connected to the first main electrode region; a withstand voltage structure region that is provided in the outer circumference of the drawing region so as to surround the drawing region and includes a forward withstand voltage structure and a reverse withstand voltage structure; and an isolation region of the second conductivity type that is arranged in the outer circumference of the withstand voltage structure region, is provided at an outer circumferential end of the drift region, extends from the first main surface to the second main surface of the drift region, and comes into contact with the second main electrode region, wherein the high-concentration region has a higher impurity concentration than the drift region and a total amount of first-conductivity-type impurities in the high-concentration region is equal to or less than 2.0×1012 cm−2.