矽氮化膜之形成装置及矽氮化膜之形成方法;APPARATUS AND METHOD OF FORMING SILICON NITRIDE FILM

摘要

本发明之矽氮化膜之形成装置，其具备：反应室，用以收容被处理体；来源气体供给机构，将含矽之来源气体供给至该反应室内；氮化气体供给机构，将氮化气体供给至该反应室内；控制机构，控制该来源气体供给机构，将该来源气体供给至该反应室内，使该矽吸附于收容在该反应室内之该被处理体，控制该氮化气体供给机构，将该氮化气体供给至该反应室内，将吸附于该被处理体之矽加以氮化，而于该被处理体形成矽氮化膜；流路，供给至该反应室内之该氮化气体到达该被处理体为止；及活化构件，配置于该流路上，并涂布白金金属系材料，将从该氮化气体供给机构所供给之该氮化气体加以活化。; a source gas supply unit supplying a source gas into the reaction chamber; a nitriding gas supply unit supplying a nitriding gas into the reaction chamber; a controller configured to form the silicon nitride film on the workpiece by controlling the source gas supply unit such that the silicon is adsorbed to the workpiece by supplying the source gas into the reaction chamber, and controlling the nitriding gas supply unit such that the silicon adsorbed to the workpiece is nitrided by supplying the nitriding gas into the reaction chamber; a flow path where the nitriding gas supplied into the reaction chamber flows until reaching the workpiece; and members arranged in the flow path. The members have a coating with platinum-group metals that activates the nitriding gas supplied from the nitriding gas supply unit.