SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

Provided is a transistor with small parasitic capacitance or high frequency characteristics or a semiconductor device including the transistor. An oxide semiconductor film includes a first region in contact with a first conductive film, a second region in contact with a first insulating film, a third region in contact with a third insulating film, a fourth region in contact with a second insulating film, and a fifth region in contact with a second conductive film. The first insulating film is positioned over the first conductive film and the oxide semiconductor film. The second insulating film is positioned over the second conductive film and the oxide semiconductor film. The third insulating film is positioned over the first insulating film, the second insulating film, and the oxide semiconductor film. The third conductive film and the oxide semiconductor film partly overlap with each other with the third insulating film provided therebetween.

主权项

1. A semiconductor device comprising:
an oxide semiconductor film; a first conductive film over and in contact with the oxide semiconductor film; a second conductive film over and in contact with the oxide semiconductor film; a first insulating film over and in contact with the first conductive film and a first region of the oxide semiconductor film; a second insulating film over and in contact with the second conductive film and a second region of the oxide semiconductor film; a third insulating film over and in contact with a third region of the oxide semiconductor film, the first insulating film and the second insulating film; and a third conductive film overlapping with the third region of the oxide semiconductor film with the third insulating film provided therebetween, wherein the third region is between the first region and the second region.