| 主权项 |
1. A semiconductor device, comprising:
a first insulating layer and a second insulating layer sequentially disposed on a substrate having a center region; a first winding portion and a second winding portion disposed in the second insulating layer and surrounding the center region, wherein each of the first and second winding portions comprises a first conductive line, a second conductive line and a third conductive line arranged from the inside to the outside, and wherein each of the first, second and third conductive lines has a first end and a second end, and wherein the first ends of the first conductive lines are coupled to each other; and a coupling portion disposed in the first and second insulating layers between the first and second winding portions, and comprising:
a first pair of connection layers cross-connecting the second ends of the first and second conductive lines; anda second pair of connection layers cross-connecting the first ends of the second and third conductive lines, wherein a plurality of spacings between the first conductive lines and the second conductive lines adjacent thereto are the same or different, and wherein at least one of the plurality of spacings is greater than a spacing between the second conductive lines and the third conductive lines adjacent thereto. |
