| 摘要 |
The present invention relates to a carbon nanotube (CNT) interlayer, a manufacturing method thereof and a thin film transistor using the same. More particularly, the present invention relates to a CNT interlayer of an organic thin film transistor which includes conjugation polymer between an organic semiconductor layer and a source/drain electrode and a single wall CNT. The single wall CNT has semiconductor characteristic and is lapped with conjugation polymer, a manufacturing method thereof and a thin film transistor using the same. |
