| 发明名称 | Magnetic memory | ||
| 摘要 | According to one embodiment, a magnetic memory includes magnetoresistive effect elements each including a first magnetic layer, a tunnel barrier layer, and a second magnetic layer which are successively stacked, and a ferroelectric capacitor provided above the magnetoresistive effect elements via an insulating layer, and including a lower electrode, a ferroelectric film, and an upper electrode which are successively stacked. | ||
| 申请公布号 | US9196335(B2) | 申请公布日期 | 2015.11.24 |
| 申请号 | US201313962913 | 申请日期 | 2013.08.08 |
| 申请人 | KABUSHIKI KAISHA TOSHIBA | 发明人 | Natori Katsuaki;Yamakawa Koji |
| 分类号 | G11C11/16;H01L43/08;B82Y25/00 | 主分类号 | G11C11/16 |
| 代理机构 | Holtz, Holtz, Goodman & Chick PC | 代理人 | Holtz, Holtz, Goodman & Chick PC |
| 主权项 | 1. A magnetic memory comprising: magnetoresistive effect elements each including a first magnetic layer, a tunnel barrier layer, and a second magnetic layer which are successively stacked; and a ferroelectric capacitor provided above the magnetoresistive effect elements via an insulating layer, and including a lower electrode, a ferroelectric film, and an upper electrode which are successively stacked. | ||
| 地址 | Tokyo JP | ||