SEMICONDUCTOR PHOTODETECTOR AND MANUFACTURING METHOD FOR TEH SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor photodetector having a structure capable of reducing leak current.SOLUTION: A semiconductor photodetector 11 has a nitride layer 17 between a passivation membrane 15 containing oxygen as a constituent element and the side surface 13a of a mesa structure 13. The nitride layer 17 has nitride as a constituent element of III-V group compound semiconductor. Antimony as a constituent element of a semiconductor layer is liable to be oxidized, but a first compound semiconductor layer 31 and a second compound semiconductor layer 33 are insulated from oxygen as a constituent element of the passivation membrane 15 by the nitride layer 17. Oxygen as a constituent element of the passivation membrane 15 can be avoided from contacting the first compound semiconductor layer 31 and the second compound semiconductor layer 33 by the arrangement of the nitride layer 17.