发明名称 TANTALUM SPUTTERING TARGET AND METHOD FOR MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a tantalum sputtering target capable of accelerating a sputtering rate and improving throughput.SOLUTION: In the sputtering surface of a sputtering target manufactured by forging, recrystallizing, annealing, rolling and heat-treating a molten and cast tantalum ingot, an orientation rate of a (200) surface is 38.6-69.8%, and an orientation rate of a (222) surface is 12.1-37.8%. The method for manufacturing the tantalum sputtering target comprises: repeating rolling and heat treatment twice or more; performing cold-rolling at a rolling speed of 10 m/min or more and a rolling ratio of 65% or more and 92% or less using a reduction roll having a reduction roll diameter of 500 mm or more; and performing heat-treatment at a temperature of 900-1400°C.
申请公布号 JP2015206120(A) 申请公布日期 2015.11.19
申请号 JP20150100654 申请日期 2015.05.18
申请人 JX NIPPON MINING & METALS CORP 发明人 SENDA SHINICHIRO;NAGATSU KOTARO
分类号 C23C14/34;H01L21/28;H01L21/285 主分类号 C23C14/34
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