发明名称 |
EPITAXIAL DEPOSITION APPARATUS, GAS INJECTORS, AND CHEMICAL VAPOR MANAGEMENT SYSTEM ASSOCIATED THEREWITH |
摘要 |
<p>An epitaxial deposition apparatus comprises a deposition chamber with at least one gas injector having a gas injection surface and a substrate support having a deposition surface; and at least one vacuum pump having a gas aperture in fluid communication with the deposition chamber and facing the gas injection surface of the at least one gas injector, the substrate support being inter-posed between the at least one gas injector and the gas aperture of the at least one vacuum pump. The invention also relates to an epitaxial deposition gas injector and a nozzle for an epitaxial deposition gas injector. Furthermore, the invention relates to a gas supply and handling system for an epitaxial deposition apparatus.</p> |
申请公布号 |
EP2646605(A4) |
申请公布日期 |
2015.11.18 |
申请号 |
EP20110844382 |
申请日期 |
2011.11.30 |
申请人 |
SOCPRA-SCIENCES ET GÉNIE S.E.C. |
发明人 |
ARES, RICHARD;ISNARD, LAURENT |
分类号 |
C30B23/02;H01L21/20 |
主分类号 |
C30B23/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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