发明名称 EPITAXIAL DEPOSITION APPARATUS, GAS INJECTORS, AND CHEMICAL VAPOR MANAGEMENT SYSTEM ASSOCIATED THEREWITH
摘要 <p>An epitaxial deposition apparatus comprises a deposition chamber with at least one gas injector having a gas injection surface and a substrate support having a deposition surface; and at least one vacuum pump having a gas aperture in fluid communication with the deposition chamber and facing the gas injection surface of the at least one gas injector, the substrate support being inter-posed between the at least one gas injector and the gas aperture of the at least one vacuum pump. The invention also relates to an epitaxial deposition gas injector and a nozzle for an epitaxial deposition gas injector. Furthermore, the invention relates to a gas supply and handling system for an epitaxial deposition apparatus.</p>
申请公布号 EP2646605(A4) 申请公布日期 2015.11.18
申请号 EP20110844382 申请日期 2011.11.30
申请人 SOCPRA-SCIENCES ET GÉNIE S.E.C. 发明人 ARES, RICHARD;ISNARD, LAURENT
分类号 C30B23/02;H01L21/20 主分类号 C30B23/02
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