| 发明名称 |
METHOD FOR MANUFACTURING OXIDE |
| 摘要 |
An oxide that can be used as a semiconductor of a transistor or the like is manufactured. In particular, an oxide having few defects such as grain boundaries is manufactured. By a magnetron sputtering method in which a magnetic field containing a component in a direction parallel to a substrate is applied, the magnetic field includes a region with a magnetic flux density of greater than or equal to 10 G and less than or equal to 100 G, and a target is a crystal body or a polycrystalline body, a crystal in the crystal body or the polycrystalline body is made to have a pellet-like shape, fly in plasma, and be stacked on a formation surface to be arranged parallel or substantially parallel to the formation surface. |
| 申请公布号 |
US2015318171(A1) |
申请公布日期 |
2015.11.05 |
| 申请号 |
US201514657445 |
申请日期 |
2015.03.13 |
| 申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
YAMAZAKI Shunpei |
| 分类号 |
H01L21/02;C23C14/35 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for manufacturing an oxide, comprising the step of:
by a magnetron sputtering method in which a magnetic field containing a component in a direction parallel to a substrate is applied, the magnetic field comprises a region with a magnetic flux density of greater than or equal to 10 G and less than or equal to 100 G, and a target is a crystal body or a polycrystalline body, making a crystal in the crystal body or the polycrystalline body have a pellet-like shape, fly in plasma, and be stacked on a formation surface to be arranged parallel or substantially parallel to the formation surface. |
| 地址 |
Atsugi-shi JP |
