发明名称 Recessed IRMN reader process
摘要 The embodiments of the present invention relate to a method for forming a magnetic read head with pinned layers extending to the ABS of the read head and magnetically coupled with an antiferromagnetic layer that is recessed in relation to the ABS of the read head. Portions of the antiferromagnetic layer and a magnetic layer that are extending to the ABS are removed, exposing a shield. A shielding material is formed on the exposed shield and a seed layer is formed on the shield and on or over a portion of the remaining antiferromagnetic layer. A pinned layer structure is formed on the seed layer and the magnetic layer.
申请公布号 US9177588(B2) 申请公布日期 2015.11.03
申请号 US201414158552 申请日期 2014.01.17
申请人 HGST NETHERLANDS B.V. 发明人 Freitag James Mac;Hong Ying;Hwang Cherngye;Maat Stefan;Nishioka Masaya;Seagle David John;Sougrati Hicham Moulay;Wang Shuxia;Zheng Yi;Zhu Honglin
分类号 H01L21/00;G11B5/85;G11B5/855;G11B5/11;G11B5/60 主分类号 H01L21/00
代理机构 Patterson & Sheridan, LLP 代理人 Patterson & Sheridan, LLP
主权项 1. A method for forming a magnetic read head, comprising: depositing an antiferromagnetic layer over a first shield; depositing a first magnetic layer over the antiferromagnetic layer, wherein the first shield, the antiferromagnetic layer and the first magnetic layer have a first portion extending to an air bearing surface (ABS); removing the first portion of the magnetic layer and the first portion of the antiferromagnetic layer to expose the first portion of the first shield, wherein the magnetic layer and the antiferromagnetic layer are recessed from the ABS by a distance; depositing a shielding material over the first portion of the first shield; removing a portion of the shielding material and a second portion of the first magnetic layer to expose a second portion of the antiferromagnetic layer; depositing a seed layer over the shielding material and the second portion of the antiferromagnetic layer; depositing a pinned layer structure over the seed layer and a third portion of the first magnetic layer; depositing a tunnel barrier or spacer layer over the pinned layer structure; and depositing a free layer over the tunnel barrier or spacer layer.
地址 Amsterdam NL
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