PRETREATMENT METHOD FOR PHOTORESIST WAFER PROCESSING

摘要

Specific embodiments of the present specification relate to apparatuses and methods for processing a semiconductor substrate partly manufactured in a remote plasma atmosphere. The methods can be performed by considering a wafer level packaging (WLP) process. The methods may include the exposure of a substrate to reducing plasma to remove photoresist scum and/or oxide from a seed layer located on the lower side. In case of some embodiments, photoresist scum is removed by a series of plasma processes of exposing the photoresist scum to oxygen-containing plasma and then exposing the same to reducing plasma. In case of some embodiments, the oxygen-containing plasma is used to separate photoresist from the surface of the substrate after electroplating. A plasma process for exposing to reducing plasma can be performed after the plasma separation. The plasma processes of the present specification may include the exposure of a multiple-tool electroplating device to remote plasma in the plasma process module.