Semiconductor device

摘要

A semiconductor device includes a pixel portion having a first thin film transistor and a driver circuit having a second thin film transistor. Each of the first thin film transistor and the second thin film transistor includes a gate electrode layer, a gate insulating layer, a semiconductor layer, a source electrode layer, and a drain electrode layer. Each of the layers of the first thin film transistor has a light-transmitting property. Materials of the gate electrode layer, the source electrode layer and the drain electrode layer of the first thin film transistor are different from those of the second transistor, and each of the resistances of the second thin film transistor is lower than that of the first thin film transistor.

主权项

1. A semiconductor device comprising:
a first conductive layer; a first insulating layer over the first conductive layer; an oxide semiconductor layer over the first insulating layer; a second insulating layer over the oxide semiconductor layer; a second conductive layer over the second insulating layer; a third conductive layer electrically connected to the oxide semiconductor layer; and a fourth conductive layer electrically connected to the oxide semiconductor layer, wherein the first conductive layer comprises a region functioning as a first gate electrode of a transistor, wherein the second conductive layer comprises a region functioning as a second gate electrode of the transistor, wherein the third conductive layer comprises a region functioning as one of a source electrode and a drain electrode of the transistor, wherein the fourth conductive layer comprises a region functioning as the other of the source electrode and the drain electrode of the transistor, wherein the first conductive layer comprises a region in which a second layer is stacked over a first layer, and wherein the first layer comprises a plateau extending beyond an end portion of the second layer.