| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a thin film transistor array substrate that uses an oxide semiconductor, has high reliability, and can be manufactured at a low cost, to provide a method of manufacturing the same, and to provide a display device. <P>SOLUTION: A thin film transistor array substrate comprises: a substrate; a first hydrogen diffusion prevention film that is formed above the substrate; and a plurality of thin film transistors that are formed on the first hydrogen diffusion prevention film and have an oxide semiconductor layer. The first hydrogen diffusion prevention film is composed of substantially the same composition as that of the oxide semiconductor layer of each of the thin film transistors. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
