Semiconductor device and method of manufacturing the same

摘要

A semiconductor device includes a plurality of transistors formed over a substrate, a support body including a horizontal portion and protrusions, wherein the horizontal portion covers at least one of the transistors, and the protrusions are formed over the horizontal portion and located between the transistors, and conductive layers and insulating layers alternately stacked over the support body and protruding upwardly along the sidewalls of the protrusions.

主权项

1. A semiconductor device, comprising:
a plurality of transistors formed over a substrate; a support body formed on the transistors and including a horizontal portion and protrusions, wherein the horizontal portion covers at least one of the transistors, and the protrusions protruded from an upper surface of the horizontal portion and located between the transistors; conductive layers and insulating layers alternately stacked over the support body; first and second junctions of the transistors; a plurality of first lines coupled to the first junctions of the transistors, respectively; and a plurality of second lines coupling the conductive layers to the second junctions of the transistors, respectively. wherein the conductive layers include pad portions bent upwardly along sidewalls of the protrusions, and wherein the transistors are located below the pad portions of the conductive layers.