Method of manufacturing semiconductor device

摘要

Provided is a semiconductor device having improved reliability. Over a semiconductor substrate, a first coil (CL1) is formed via a first insulating film. A second insulating film (IL3) is formed so as to cover the first insulating film and the first coil. Over the second insulating film, a pad (PD1) is formed. Over the second insulating film, a multi-layer film (LF) having an opening (OP1) exposing a part of the pad is formed. Over the multi-layer insulating film (LF), a second coil (CL2) is formed. The second coil (CL2) is placed over the first coil (CL1). The second and first coils are magnetically coupled to each other. The multi-layer film (LF) includes a silicon dioxide film (LF1), a silicon nitride film (LF2) over the silicon dioxide film, and a resin film (LF3) over the silicon nitride film.