| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device in which the structure of a gate electrode can be made optimum, as much as possible, by a memory element and the transistor of a peripheral circuit.SOLUTION: A nonvolatile semiconductor memory device includes a semiconductor substrate, a memory element including a first gate electrode of first height on the semiconductor substrate via a first insulating film, and a peripheral element other than the memory element including a second gate electrode of second height on the semiconductor substrate via a second insulating film. Lamination of gate material is different between the first gate electrode of the memory element and the second gate electrode of the peripheral element, and the first height of the first gate electrode is different from the second height of the second gate electrode. |
