SEMICONDUCTOR POLISHING COMPOUND

摘要

To provide a semiconductor polishing compound which is excellent in dispersion stability and removal rate and which has a stabilized polishing property, as it is less susceptible to an influence even when contacted with an alkaline polishing compound during its application to CMP comprising a multistage process. A polishing compound for chemical mechanical polishing to polish a surface to be polished in the production of a semiconductor circuit device, said polishing compound comprising cerium oxide abrasive particles, water and a dicarboxylic acid represented by the formula 1: HOOC(CH₂)_nCOOH Formula 1 wherein n is an integer of from 1 to 4, and the pH of said polishing compound at 25° C. being within a range of from 3.5 to 6.