发明名称 VARIABLE GAIN AMPLIFIER AND SEMICONDUCTOR INTEGRATED DEVICE
摘要 PROBLEM TO BE SOLVED: To vary gain of an amplifier without degrading noise characteristics. SOLUTION: Each unit 12 is constituted of gate grounding type MOS transistors M1, M2 which are cascode-connected to each other and a plurality of units 12 are connected in parallel to constitute a unit group. The number of units for executing an amplifying operation by supplying bias voltage V1 or ground voltage to the gate of the MOS transistor M2 in each unit 12 is changed to control the gain. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007221402(A) 申请公布日期 2007.08.30
申请号 JP20060038765 申请日期 2006.02.16
申请人 FUJITSU LTD 发明人 SATO HIROYUKI;YAMAZAKI HIROSHI
分类号 H03G3/10 主分类号 H03G3/10
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